STD2NC40-1 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

STD2NC40-1
N-CHANNEL 400V - 4.7Ω - 1.5A IPAK
PowerMesh™ II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD2NC40-1
400V
<5.5Ω
1.5A
s TYPICAL R_DS(on) = 4.7Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™ II is the evolution of the first
generation of MESH OVERLAY™ . The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
3
2
1
IPAK
(SUFFIX“-1”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITH MODE LOW POWER SUPPLIES
(SMPS)
s CFL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (s) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
400
400
±30
1.5
0.95
6
30
0.24
3.5
–60 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)I_SD ≤1.5A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
May 2000
1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.