STD2NB25 Datasheet, PDF (3/9 Pages) STMicroelectronics – N - CHANNEL 250V - 1.7ohm - 2A - IPAK/DPAK PowerMESH MOSFET

STD2NB25
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
t_r
Parameter
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
VDD = 125 V
ID = 1 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 200 V I_D =2 A V_GS = 10 V
SWITCHING OFF
Symbol
t_r(Voff)
tf
t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 200 V I_D = 2 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 2 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 2 A di/dt = 100 A/µs
V_DD = 50 V T_j = 150 ^oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
5
7
Max.
7
10
Unit
ns
ns
10.3 16
nC
3.7
nC
2.3
nC
Min.
Typ.
11
13
18
Max.
15
18
24
Unit
ns
ns
ns
Min.
Typ.
Max.
2
8
Unit
A
A
1.5
V
120
ns
300
nC
5
A
Safe Operating Area
Thermal Impedance
3/9