STD2NB25 Datasheet, PDF (2/9 Pages) STMicroelectronics – N - CHANNEL 250V - 1.7ohm - 2A - IPAK/DPAK PowerMESH MOSFET

STD2NB25
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
T_l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
3.12
100
1.5
275
o_C/W
oC/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbol
I_AR
E_AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Max Value
2
50
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbol
V_(BR)DSS
IDSS
I_GSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
I_D = 250 µA V_GS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating
T_c = 125 ^oC
Gate-body Leakage
Current (VDS = 0)
V_GS = ± 20 V
Min.
250
Typ.
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
Symbol
V_GS(th)
RDS(on)
I_D(on)
Parameter
Test Conditions
Gate Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On VGS = 10V ID =1 A
Resistance
On State Drain Current V_DS > I_D(on) x R_DS(on)max
V_GS = 10 V
Min.
2
Typ.
3
1.7
Max.
4
2
Unit
V
Ω
2
A
DYNAMIC
Symbol
gfs (∗)
C_iss
Coss
C_rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1 A
V_DS = 25 V f = 1 MHz V_GS = 0
Min.
0.5
Typ.
1.6
Max.
Unit
S
185 250 pF
45
60
pF
5
7
pF
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