STD2NB25 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 250V - 1.7ohm - 2A - IPAK/DPAK PowerMESH MOSFET

®
STD2NB25
N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAK
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD2NB25
250 V
<2Ω
2A
s TYPICAL RDS(on) = 1.7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR SMD DPAK VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
3
1
1
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
VDGR
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
V_GS
I_D
ID
I_DM(•)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1998
Value
250
250
± 20
2
1.25
8
40
0.32
6
-65 to 150
150
(1) ISD ≤2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
o_C
o_C
1/9