STD2N80K5 Datasheet, PDF (3/23 Pages) STMicroelectronics – Ultra low gate charge

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
DPAK,
TO-220,
IPAK
Unit
TO-220FP
V_GS
I_D
I_D
(2)
I_DM
P_TOT
I_AR
E_AS
(3)
dv/dt
(4)
dv/dt
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Max current during repetitive or single pulse
avalanche (pulse width limited by T_jmax)
Single pulse avalanche energy
(starting T_J = 25 °C, I_D=I_AS, V_DD= 50 V)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_j
Operating junction temperature
T_stg
Storage temperature
1. For TO-220FP limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I_SD ≤ 2 A, di/dt ≤ 100 A/μs, peak V_DS ≤ V_(BR)DSS
4. V_DS ≤ 640 V
30
(1)
2
1.3
8
45
20
0.5
60.5
4.5
50
-55 to 150
V
A
A
A
W
A
mJ
V/ns
V/ns
°C
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
DPAK TO-220FP TO-220 IPAK
R_thj-case Thermal resistance junction-case
R_thj-pcb Thermal resistance junction-pcb
R_thj-amb Thermal resistance junction-amb
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
2.78
(1)
50
6.25 2.78
62.5
2.78
°C/W
100
DocID024993 Rev 2
3/23