STD2N80K5 Datasheet, PDF (1/23 Pages) STMicroelectronics – Ultra low gate charge

STD2N80K5, STF2N80K5,
STP2N80K5, STU2N80K5
N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5
Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet − production data
TAB
3
1
DPAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
TAB
3
2
1
IPAK
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes V_DS R_DS(on)max I_D
STD2N80K5
STF2N80K5
800 V 4.5 Ω
2A
STP2N80K5
STU2N80K5
P_TOT
45 W
20 W
45 W
• TO-220 worldwide best R_DS(on)
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
These devices are N-channel Power MOSFETs
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
Order codes
STD2N80K5
STF2N80K5
STP2N80K5
STU2N80K5
Table 1. Device summary
Marking
Package
2N80K5
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
February 2014
This is information on a product in full production.
DocID024993 Rev 2
1/23
www.st.com
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