STD22NM20N_05 Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh™ II MOSFET

STD22NM20N
ELECTRICAL CHARACTERISTICS (T_CASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 1mA, V_GS = 0
200
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating, T_C = 125 °C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20V
100
nA
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 µA
3.5
4.2
5
V
R_DS(on)
Static Drain-source On
Resistance
V_GS = 10V, I_D = 11 A
0.088 0.105
Ω
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
g_fs (2) Forward Transconductance V_DS = 15 V_, I_D=11 A
8
S
C_iss
Input Capacitance
V_DS = 25V, f = 1 MHz, V_GS = 0
800
pF
C_oss
Output Capacitance
330
pF
C_rss
Reverse Transfer
130
pF
Capacitance
C_{oss eq. (**)} Equivalent Output
V_GS = 0 V, V_DS = 0 V to 400 V
225
pF
Capacitiance
R_G
Gate Input Resistance
f= 1MHz Gate DC Bias = 0
Test Sgnal Level = 20 mV
Open Drain
5
Ω
t_d(on)
t_r
t_r(Voff)
t_f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_DD = 100 V, I_D = 11 A
R_G = 4.7Ω V_GS = 10 V
(see Figure 15)
40
ns
15
ns
40
ns
11
ns
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 100 V, I_D = 20 A,
V_GS = 10 V
(see Figure 19)
32
50
nC
6
nC
25
nC
(**) C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS increases from 0 to 80% V_DSS
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
I_SD
I_SDM (1)
Source-drain Current
Source-drain Current (pulsed)
V_SD (2) Forward On Voltage
I_SD = 20 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 20 A, di/dt = 100 A/µs
V_DD = 100V, T_j = 25°C
(see test circuit, Figure 17)
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(1) Pulse width limited by safe operating area.
(2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
I_SD = 20 A, di/dt = 100 A/µs
V_DD = 100V, T_j = 150°C
(see test circuit, Figure 17)
Min.
Typ.
Max. Unit
22
A
88
A
1.3
V
160
ns
960
µC
12.8
A
225
ns
1642
µC
15
A
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