STD22NM20N_05 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh™ II MOSFET

STD22NM20N
N-CHANNEL 200V - 0.088Ω - 22A DPAK
ULTRA LOW GATE CHARGE MDmesh™ II MOSFET
Table 1: General Features
TYPE
V_DSS
R_DS(on)
I_D
STD22NM20N
200 V
< 0.105 Ω 22 A
■ WORLDWIDE LOWEST GATE CHARGE
■ TYPICAL R_DS(on) = 0.088 Ω
■ HIGH dv/dt and AVALANCHE CAPABILITIES
■ LOW INPUT CAPACITANCE
■ LOW GATE RESISTANCE
DESCRIPTION
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technol-
ogy to lower voltages. The device exhibits world-
wide lowest gate charge for any given on-
resistance. Its use is therefore ideal as primary
switch in isolated DC-DC converters for Telecom
and Computer applications. Used in combination
with secondary-side low-voltage STripFET™
products, it contributes to reducting losses and
boosting effeciency.
Figure 1: Package
3
1
DPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density allowing system miniaturization
and higher efficiencies
Table 2: Order Codes
SALES TYPE
STD22NM20NT4
MARKING
D22NM20N
PACKAGE
DPAK
PACKAGING
TAPE & REEL
November 2005
Rev. 5
1/10