STD22NM20N_05 Datasheet, PDF (2/10 Pages) STMicroelectronics – N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh™ II MOSFET

STD22NM20N
Table 3: Absolute Maximum ratings
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°
Drain Current (continuous) at T_{C =} 100°
I_DM (*) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
T_j
Storage Temperature
T_stg
Max Operating Junction Temperature
(*) I_SD ≤ 22A, di/dt ≤ 400A/µs, V_DD = 80% V_(BR)DSS
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthj-ambT_l Thermal Resistance Junction-pcb (*)
Maximum Lead Temperature For Soldering Purpose
(*) When mounted on 1 inch² FR-4 board, 2 oz Cu, t ≤ 10 sec
Table 5: Avalanche Characteristics
Symbol
Parameter
I_AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = 22 A, V_DD = 50 V)
Value
200
200
± 20
22
13.7
88
100
0.8
14
150
-65 to 150
1.25
100
43
275
Max Value
22
380
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
°C/W
°C/W
°C/W
°C
Unit
A
mJ
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