STC6NF30V Datasheet, PDF (3/8 Pages) STMicroelectronics – N-channel 30V - 0.020 - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET

STC6NF30V
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 15 V
I_D = 3 A
20
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 2.5 V
25
ns
(Resistive Load, Figure 1)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD= 15V I_D= 6A V_GS=2.5V
(see test circuit, Figure 2)
6.8
9
nC
2.0
nC
3.4
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V
I_D = 3 A
R_G = 4.7Ω,
V_GS = 2.5 V
(Resistive Load, Figure 1)
Min.
Typ.
32
13
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 6 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 6 A
di/dt = 100A/µs
V_DD = 15 V
T_j = 150°C
(see test circuit, Figure 3)
Min.
Typ.
25
21
1.7
Max.
6
24
1.2
Unit
A
A
V
ns
nC
A
Safe Operating Area.
Thermal Impedance.
3/8