STC6NF30V Datasheet, PDF (2/8 Pages) STMicroelectronics – N-channel 30V - 0.020 - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET

STC6NF30V
THERMAL DATA
Rthj-pcb
Rthj-pcb
T_j
T_stg
Thermal Resistance Junction-PCB (**)
Thermal Resistance Junction-PCB (*)
Operating Junction Temperature
Storage temperature
(*) When Mounted on FR-4 board with 1 inch² pad, 2 oz of Cu and t [ 10 sec
(**) When Mounted on minimum recommended footprint
Max
Max
100
83.5
-55 to 150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T_j = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
30
Breakdown Voltage
V
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 12 V
±100
nA
ON ^(*)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 4.5 V
V_GS = 2.5 V
I_D = 3 A
I_D = 3 A
Min.
0.6
Typ. Max.
0.020 0.025
0.025 0.030
Unit
V
Ω
Ω
DYNAMIC
Symbol
g_fs ^(*)
C_iss
C_oss
C_rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS = 10 V
I_D = 6 A
V_DS = 25V f = 1 MHz, V_GS = 0
Min.
Typ.
18
800
180
32
Max.
Unit
S
pF
pF
pF
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