STC6NF30V Datasheet, PDF (1/8 Pages) STMicroelectronics – N-channel 30V - 0.020 - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET

STC6NF30V
N-CHANNEL 30V - 0.020 Ω - 6A TSSOP8
2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STC6NF30V
30 V
< 0.025 Ω ( @ 4.5 V )
< 0.030 Ω ( @ 2.5 V )
6A
s TYPICAL R_DS(on) = 0.020 Ω @ 4.5 V
s TYPICAL R_DS(on) = 0.025 Ω @ 2.5 V
s ULTRA LOW THRESHOLD
GATE DRIVE (2.5 V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s DOUBLE DICE IN COMMON DRAIN
CONFIGURATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance.
TSSOP8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY SAFETY UNIT FOR NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
(•) Pulse width limited by safe operating area.
February 2003
Value
30
30
± 12
6
3.8
24
1.5
Unit
V
V
V
A
A
A
W
1/8