STB9NB50 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

STB9NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
t_r
P a ra m et er
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q_gs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V
ID = 4.3 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V ID = 8.6 A VGS = 10 V
Min.
Typ .
19
11
32
10.6
13.7
Max.
30
15
45
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
t_{r(Vo f f)}
tf
t_c
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 400 V
I_D = 8.6
A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
11.5
11
20
Max.
17
16
28
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 8.6 A
VGS = 0
t_rr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 8.6 A
VR = 100 V
di/dt = 100 A/µs
Tj = 150 ^oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
420
3.5
16.5
Max.
8.6
34.4
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8