STB9NB50 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

STB9NB50
THERMAL DATA
R_{t hj-ca se}
Rt hj- amb
R_{t hj- amb}
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering
Purpose
Max
Max
Typ
1
62.5
0.5
300
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR , V_DD = 50 V)
Max Valu e
8.6
520
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
I_D = 250 µA
V_GS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating
o_C
T_c = 125
Gate-body Leakage
Current (V_DS = 0)
VGS = ± 30 V
Min.
500
Typ .
Max.
Unit
V
1
µA
50
µA
±100 nA
ON (∗)
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
V_DS = V_GS I_D = 250 µA
Static Drain-source On VGS = 10 V ID = 4.3 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
V_GS = 10 V
Min.
3
Typ .
4
Max.
5
Unit
V
0.75 0.85
Ω
Ω
8.6
A
DYNAMIC
S ymb ol
g_fs (∗)
Ciss
C_oss
C_rss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max I_D = 4.3 A
Min.
4.5
Typ .
5.7
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1250 1625 pF
175 236 pF
20
27
pF
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