STB9NB50 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

STB9NB50
N - CHANNEL ENHANCEMENT MODE
Power MESH™ MOSFET
TYPE
ST B9NB50
V_DSS
500 V
R_DS(on)
< 0.85 Ω
I_D
8.6 A
s TYPICAL RDS(on) = 0.75 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s VERY LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s LOW LEAKAGE CURRENT
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR SMD D²PAK VERSION CONTACT
SALES OFFICE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
123
I²PAK
TO-262
(suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_{D GR}
V_GS
ID
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg St orage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1998
Value
500
500
± 30
8.6
5.4
34.4
125
1.0
4.5
-65 to 150
150
(1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/^oC
V/ ns
o_C
o_C
1/8