STB80NF12 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/D²PAK STripFET™ II POWER MOSFET

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 50 V
I_D = 40 A
40
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 10 V
145
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD= 80 V I_D= 80 A V_GS= 10V
140
189
nC
23
nC
51
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 50 V
I_D = 40 A
R_G = 4.7Ω,
V_GS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
134
115
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ^(•)
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 80 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 80 A
di/dt = 100A/µs
V_DD = 35 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
155
0.85
11
Max.
80
320
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Safe Operating Area for TO-220FP
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