STB80NF12 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/D²PAK STripFET™ II POWER MOSFET

STB80NF12 STW80NF12
STP80NF12 STP80NF12FP
N-CHANNEL 120V-0.013Ω-80A TO-220/TO-247/TO-220FP/D²PAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB80NF12
STP80NF12
STP80NF12FP
STW80NF12
120 V
120 V
120 V
120 V
<0.018 Ω
<0.018 Ω
<0.018 Ω
<0.018 Ω
80 A(*)
80 A(*)
80 A(*)
80 A(*)
s TYPICAL R_DS(on) = 0.013Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D^²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
TO-220
TO-220FP
3
2
1
3
2
1
D^²PAK
TO-263
(Suffix “T4”)
3
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(*)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
V_ISO
Insulation Withstand Voltage (DC)
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Limited by Package
(2) I_SD ≤35A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
Value
STB_P_W80NF12
STP80NF12FP
120
120
± 20
80
80(#)
60
60(#)
320
320(#)
300
45
2.0
0.3
10
700
------
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
-55 to 175
°C
(#) Refer to SOA for the max allovable currente values on FP-type
due to thermal resistance value.
(1) Starting T_j = 25 ^oC, I_D = 40A, V_DD = 45V
March 2003
1/12