STB80NF12 Datasheet, PDF (2/12 Pages) STMicroelectronics – N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/D²PAK STripFET™ II POWER MOSFET

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
THERMAL DATA
TO-247
Rthj-case Thermal Resistance Junction-case
Max 0.5
Rthj-amb Thermal Resistance Junction-ambient
Max 50
T_l
Maximum Lead Temperature For Soldering Purpose
300
D²PAK
TO-220
0.5
62.5
300
TO-220FP
3.33
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_case = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
120
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20V
±100
nA
ON ⁽¹⁾
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
I_D = 40 A
Min.
2
Typ. Max.
0.013 0.018
Unit
V
Ω
DYNAMIC
Symbol
g_fs ^(*)
C_iss
C_oss
C_rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS = 15 V
I_D = 40 A
V_DS = 25V f = 1 MHz V_GS = 0
Min.
Typ.
80
4300
600
230
Max.
Unit
S
pF
pF
pF
2/12