STB60NE06-16 Datasheet, PDF (3/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STB60NE06-16
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
t_r
(di/ dt )on
Q_g
Q_gs
Qgd
P a ra m et er
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
RG =4.7 Ω
VDD = 48 V
R_G = 47 Ω
V_DD = 48 V
ID = 30 A
VGS = 10 V
ID = 60 A
V_GS =10 V
I_D = 60 A V_GS = 10 V
Min.
Typ .
40
125
280
115
25
40
Max.
60
180
160
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
t_f
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 60 A
R_G =4.7 Ω V_GS = 10 V
Min.
Typ .
15
150
180
Max.
25
210
260
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
I_SD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 60 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 60 A
VDD = 30 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 ^oC
Min.
Typ .
Max.
60
240
Unit
A
A
1.5
V
100
ns
0.4
µC
8
A
Safe Operating Area
Thermal Impedance
3/9