STB60NE06-16 Datasheet, PDF (2/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STB60NE06-16
THERMAL DATA
Rt hj-ca se
Rth j -a m b
R_{thc- si nk}
T_l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
o_{C/ W}
o_{C/ W}
oC/W
o_C
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E _AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max, δ < 1%)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR , V_DD = 25 V)
Max Valu e
60
350
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
S ymb ol
V_(BR)DSS
I_DSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
I_D = 250 µA V_GS = 0
Zero G ate Voltage
V_DS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
o_C
Tc = 125
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
Min.
60
Typ .
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
S ymb ol
V _{GS(th )}
R_{DS( o n )}
I_{D(o n)}
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On V_GS = 10V I_D = 30 A
Resistance
On St ate Drain Current V_DS > I_D(on) x R_{DS(on) max}
V_GS = 10 V
Min.
2
Typ .
3
Max.
4
Unit
V
0.013 0.016 Ω
60
A
DYNAMIC
S ymb ol
gfs (∗)
Ciss
C_oss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =30 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
20
Typ .
35
Max.
Unit
S
4600 6200 pF
580 800 pF
140 200 pF
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