STB60NE06-16 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STB60NE06-16
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE
STB60NE06-1
V DSS
60 V
RDS(on)
< 0.016 Ω
ID
60 A
s TYPICAL RDS(on) = 0.013 Ω
s EXCEPTIONAL dV/dt CAPABILTY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ” Single Feature Size™ ”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
1
D²PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_{D GR}
V_GS
ID
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dV/dt(1) Peak Diode Recovery voltage slope
T_stg St orage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1998
Value
Uni t
60
V
60
V
± 20
V
60
A
42
A
240
A
150
W
1
W/^oC
6
-65 to 175
175
(1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX
V/ ns
o_C
o_C
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