STB55NF03L Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET

STB55NF03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 27.5 A
R_G = 4.7 Ω
V_GS = 4.5 V
(Resistive Load, see fig. 3)
V_DD = 24 V I_D = 55 A V_GS = 4.5 V
Min.
Typ.
25
280
25
11
12
Max.
35
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_d(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V
I_D = 27.5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
Min.
Typ.
40
60
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 55 A V_GS = 0
t_rr
Q_rr
I _{R RM}
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I_SD = 55 A
V_DD = 15 V
di/dt = 100 A/µs
T_j = 150 ^oC
(see test circuit, fig. 5)
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
45
52
2.3
Max.
55
220
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8