STB55NF03L Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET

®
STB55NF03L
N-CHANNEL 30V - 0.01 Ω - 55A D²PAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB55NF03L
30 V < 0.013 Ω 55 A
s TYPICAL RDS(on) = 0.01 Ω
s OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
s LOW GATE CHARGE
s LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s LOW VOLTAGE DC-DC CONVERTERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s HIGH EFFICIENCY SWITCHING CIRCUITS
3
1
D²PAK
TO-263
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM (•)
P_tot
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
10/01/2000
Va l u e
30
30
± 20
55
39
220
80
0.53
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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