STB55NF03L Datasheet, PDF (2/8 Pages) STMicroelectronics – N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET

STB55NF03L
THERMAL DATA
R_thj-case
R _{th j -a mb}
T_l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature F or Soldering Purpose
1. 87 5
6 2. 5
3 00
o_C/W
o_C/W
o_C
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
I_DSS
I_GSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
V_DS = Max Rat ing
Drain Current (V_GS = 0) V_DS = Max Rat ing
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
T_c =125 ^oC
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
V_GS(th)
RDS(on)
I_{D(o n)}
P ar am et e r
Test Conditions
Gat e Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On VGS = 10V ID = 27.5 A
Resistance
V_GS = 4. 5V I_D = 27.5 A
On State Drain Current V_DS > I_{D(o n)} x R_{DS(on )max}
V_GS = 10 V
Min.
1
55
Typ.
0.01
0.015
Max.
2.5
0.013
0.021
Unit
V
Ω
Ω
A
DYNAMIC
Symbo l
g_fs (∗)
C_iss
C_oss
C_rss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
V_DS > I_{D(o n)} x R_{DS(on )ma x} I_D =27.5 A
Typ.
40
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
1450
pF
390
pF
150
pF
2/8