STB50NE10L Datasheet, PDF (3/5 Pages) STMicroelectronics – N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET

STB50NE10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 50 V
RG =4.7 Ω
ID = 25 A
VGS = 10 V
Min.
Typ.
TBD
Max.
TBD
Unit
ns
ns
Qg
Total Gate Charge
VDD = 80 V ID = 50 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
TBD TBD nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 80 V ID = 50 A
RG =4.7 Ω VGS = 10 V
Min.
Typ.
TBD
Max.
TBD
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 50 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 50 A
VDD = 50 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 ^oC
Min.
Typ.
Max.
50
200
Unit
A
A
1.5
V
TBD
ns
nC
A
3/5