STB50NE10L Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET

®
STB50NE10L
N - CHANNEL 100V - 0.020Ω - 50A - D²PAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB50NE10L
100 V <0.025 Ω
50 A
s TYPICAL RDS(on) = 0.020 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™ " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
PRELIMINARY DATA
3
1
D²PAK
TO-263
(suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
Value
Unit
100
V
100
V
± 20
V
50
A
35
A
200
A
150
W
1
W/^oC
6
V/ns
-65 to 175
o_C
175
o_C
(1) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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