STB50NE10L Datasheet, PDF (2/5 Pages) STMicroelectronics – N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET

STB50NE10L
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
o_C/W
oC/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 ^oC, ID = IAR, VDD = 50 V)
Max Value
50
300
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
o_C
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
100
Typ.
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold
Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS ID = 250 µA
VGS = 10V ID = 25 A
VGS = 5 V ID = 25 A
Min.
1
Typ.
1.7
Max.
2.5
Unit
V
0.020 0.025 mΩ
00.24 0.030 µΩ
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max
50
A
VGS = 10 V
DYNAMIC
Symbol
gfs (∗)
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =25 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
20
Typ.
35
Max.
Unit
S
TBD TBD pF
pF
pF
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