STB3NB60 Datasheet, PDF (3/9 Pages) STMicroelectronics – N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET

STB3NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
t_r
P a ra m et er
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q_gs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 1.6 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 3.3 A VGS = 10 V
Min.
Typ .
11
7
15
6.2
5.6
Max.
17
11
22
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
t_{r(Vo f f)}
tf
t_c
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 480 V I_D = 3.3 A
R_G = 4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
Min.
Typ .
11
13
18
Max.
16
18
25
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 3.3 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
I_SD = 3.3 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 ^oC
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
Max.
3.3
13.2
Unit
A
A
1.6
V
500
ns
2.1
µC
8.5
A
Safe Operating Area for D²PAK/I²PAK
Thermal Impedance for D²PAK/I²PAK
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