STB3NB60 Datasheet, PDF (2/9 Pages) STMicroelectronics – N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET

STB3NB60
THERMAL DATA
R_{t hj-ca se}
Rt hj- amb
R_{thc- si nk}
T_l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.56
62.5
0.5
300
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 ^oC, ID = IAR , VDD = 50 V)
Max Valu e
3.3
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
I_DSS
I_GSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
V_DS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 ^oC
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 30 V
Min.
600
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON (∗)
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
V_DS = V_GS I_D = 250 µA
Static Drain-source On VGS = 10V ID = 1.6 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
3
Typ .
4
Max.
5
Unit
V
3.3
3.6
Ω
3.3
A
DYNAMIC
S ymb ol
g_fs (∗)
C_iss
C_oss
C_rss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max I_D = 1.6 A
Min.
1.2
Typ .
2
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
400 520 pF
57
77
pF
7
9
pF
2/9