STB3NB60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET

®
STB3NB60
N - CHANNEL 600V - 3.3Ω - 3.3A - D²PAK/I²PAK
PowerMESH™ MOSFET
TYPE
STB3NB60
V _DSS
600 V
R_DS(on)
<3.6 Ω
I_D
3.3 A
s TYPICAL RDS(on) = 3.3 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
1
D2PAK
TO-263
(Suffix ”T4”)
123
I2PAK
TO-262
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gat e-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
I_DM ( •)
P_tot
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Uni t
600
V
600
V
± 30
V
3.3
A
2.1
A
13.2
A
80
0.64
W
W/^oC
4.5
-65 to 150
150
(1) ISD ≤3.3A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ ns
o_C
o_C
June 1998
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