STB30N10 Datasheet, PDF (3/5 Pages) STMicroelectronics – N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR

STB30N10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
t_r
(di/dt)_on
Q_g
Q_gs
Q_gd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 50 V
R_G = 47 Ω
ID = 15 A
V_GS = 10 V
V_DD = 80 V
R_G = 47 Ω
I_D = 30 A
V_GS = 10 V
I_D = 30 A V_GS = 10 V V_DD = 80 V
Min.
Typ.
25
60
480
80
13
28
Max.
35
90
120
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
t_r(Voff)
t_f
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 80 V
R_G = 47 Ω
I_D = 30 A
V_GS = 10 V
Min.
Typ.
25
25
55
Max.
35
35
75
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage I_SD = 30 A
V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
ISD = 30 A
V_DD = 30 V
I_RRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
T_j = 150 ^oC
Min.
Typ.
175
1.05
12
Max.
30
120
1.5
Unit
A
A
V
ns
µC
A
3/5