STB30N10 Datasheet, PDF (2/5 Pages) STMicroelectronics – N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR

STB30N10
THERMAL DATA
R_thj-case
R_thj-amb
R_thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
1
62.5
0.5
o_C/W
o_C/W
o_C/W
AVALANCHE CHARACTERISTICS
Symbol
I_AR
E_AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 25 V)
Max Value
30
240
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V_(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA
VGS = 0
I_DSS
I_GSS
Zero Gate Voltage
V_DS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 100 ^oC
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
Min.
100
Typ.
Max.
10
10
±100
Unit
V
µA
µA
nA
ON (∗)
Symbol
V_GS(th)
R_DS(on)
I_D(on)
Parameter
Test Conditions
Gate Threshold
Voltage
V_DS = V_GS I_D = 250 µA
Static Drain-source On V_GS = 10 V I_D = 15 A
Resistance
On State Drain Current V_DS > I_D(on) x R_DS(on)max V_GS = 10 V
Min.
2
30
Typ.
3
0.06
Max.
4
0.07
Unit
V
Ω
A
DYNAMIC
Symbol
g_fs (∗)
C_iss
Coss
C_rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max I_D = 15 A
Min.
10
Typ.
20
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
2600 3600 pF
350 500 pF
85
110
pF
2/5