STB30N10 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR

STB30N10
N - CHANNEL 100V - 0.06Ω - 30A - D²PAK
POWER MOS TRANSISTOR
TYPE
STB30N10
V_DSS
100 V
R_DS(on)
< 0.07 Ω
I_D
30 A
s TYPICAL RDS(on) = 0.06 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s VERY HIGH CURRENT CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V_DGR
V_GS
I_D
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
September 1998
Value
100
100
± 20
30
21
120
150
1
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
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