STB20PF75 Datasheet, PDF (3/9 Pages) STMicroelectronics – P-CHANNEL 75V - 0.10 Ω - 20A D²PAK STripFET™ II POWER MOSFET

STB20PF75
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON ^(*)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 37.5 V
I_D = 10 A
20
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 10 V
51
ns
(Resistive Load, Figure 1)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD=60V I_D=20A V_GS=10V
(See test circuit, Figure 2)
38
52
nC
7
nC
10
nC
SWITCHING OFF ^(*)
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
Min. Typ. Max. Unit
V_DD = 60 V
I_D = 10 A
40
ns
R_G = 4.7 Ω
V_GS = 10 V
13
ns
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE ^(*)
Symbol
Parameter
Test Conditions
I_SD
I_SDM ^(•)
Source-drain Current
Source-drain Current (pulsed)
V_SD (*) Forward On Voltage
I_SD = 20 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*) _{Pulse width [ 300 µs, duty cycle 1.5 %.}
(•) _{Pulse width limited by TJMAX}
I_SD = 20 A
di/dt = 100A/µs
V_DD = 25 V
T_j = 150°C
(see test circuit, Figure 3)
Min.
Typ.
80
250
6.2
Max.
20
80
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/9