STB20PF75 Datasheet, PDF (1/9 Pages) STMicroelectronics – P-CHANNEL 75V - 0.10 Ω - 20A D²PAK STripFET™ II POWER MOSFET

STB20PF75
P-CHANNEL 75V - 0.10 Ω - 20A D²PAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB20PF75
75 V < 0.12 Ω 20 A
■ TYPICAL R_DS(on) = 0.10 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
■ MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
3
1
D²PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area
(1) I_SD ≤20A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 10 A, V_DD = 30V
March 2004
Value
75
75
± 20
20
14
80
80
0.53
10
350
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
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