STB20PF75 Datasheet, PDF (2/9 Pages) STMicroelectronics – P-CHANNEL 75V - 0.10 Ω - 20A D²PAK STripFET™ II POWER MOSFET

STB20PF75
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-PCB Thermal Resistance Junction-PCB
Max
T_l
Maximum Lead Temperature For Soldering Purpose
Typ
(1.6 mm from case, for 10 sec)
(*) _{When Mounted on 1 inch}2 _{FR-4 board, 2 oz of Cu}
1.88
34
300
ELECTRICAL CHARACTERISTICS (T_case = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
75
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
°C/W
°C/W
°C
Max. Unit
V
1
µA
10
µA
±100
nA
ON ^(*)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
I_D = 10 A
Min.
2
Typ.
3
0.10
Max.
4
0.12
Unit
V
Ω
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
g_fs
Forward Transconductance VDS = 15 V
I_D = 10 A
15
S
C_iss
Input Capacitance
V_DS = 25V, f = 1 MHz, V_GS = 0
1150
pF
C_oss
Output Capacitance
170
pF
C_rss
Reverse Transfer
70
pF
Capacitance
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