STB16NS25T4 Datasheet, PDF (3/9 Pages) STMicroelectronics – N-CHANNEL 250V - 0.23W - 16A D2PAK MESH OVERLAY™ MOSFET

STB16NS25
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
Turn-on Delay Time
t_r
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DD = 125 V, I_D = 8 A
R_G = 4.7Ω V_GS = 10 V
(see test circuit, Figure 3)
V_DD = 200V, I_D = 16 A,
V_GS = 10V
Min.
Typ.
15
25
60
8
22
Max.
80
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(off)
Turn-off- Delay Time
V_DD = 125V, I_D = 8 A,
75
ns
t_f
Fall Time
R_G = 4.7Ω, V_GS = 10V
35
ns
(see test circuit, Figure 3)
t_r(Voff)
) _tf
t(s ^tc
Off-voltage Rise Time
Fall Time
Cross-over Time
V_clamp = 200V, I_D = 16 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
25
ns
30
ns
55
ns
uc _{SOURCE DRAIN DIODE}
rod ^Symbol
Parameter
Test Conditions
P ^ISD
Source-drain Current
te ^{ISDM (2) Source-drain Current (pulsed)}
le ^{VSD (1) Forward On Voltage}
I_SD = 16 A, V_GS = 0
o _trr
bs ^Qrr
O I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 16 A, di/dt = 100A/µs
V_DD = 33V, T_j = 150°C
(see test circuit, Figure 5)
- _{Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
) _{2. Pulse width limited by safe operating area.}
Min. Typ.
270
1.5
11.5
Obsolete ^{Product(s Safe Operating Area}
Thermal Impedance
Max.
16
64
1.5
Unit
A
A
V
ns
µC
A
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