STB16NS25T4 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 250V - 0.23W - 16A D2PAK MESH OVERLAY™ MOSFET

STB16NS25
N-CHANNEL 250V - 0.23Ω - 16A D²PAK
MESH OVERLAY™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB16NS25
250 V < 0.28 Ω 16 A
s TYPICAL R_DS(on) = 0.23 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
3
1
DESCRIPTION
) ^{Using the latest high voltage MESH OVERLAY™}
t(s ^{process, STMicroelectronics has designed an ad-}
vanced family of power MOSFETs with outstanding
c _{performance. The new patented STrip layout cou-}
u _{pled with the Company’s proprietary edge termina-}
d _{tion structure, makes it suitable in coverters for}
ro ^{lighting applications.}
lete ^{P APPLICATIONS}
s HIGH CURRENT, HIGH SPEED SWITCHING
so s SWITH MODE POWER SUPPLIES (SMPS)
b _{s DC-DC CONVERTERS FOR TELECOM,}
O _{INDUSTRIAL, AND LIGHTING EQUIPMENT}
D²PAK
INTERNAL SCHEMATIC DIAGRAM
roduct(s) ^- _{ABSOLUTE MAXIMUM RATINGS}
P _Symbol
Parameter
te _VDS
Drain-source Voltage (V_GS = 0)
le _VDGR
Drain-gate Voltage (R_GS = 20 kΩ)
soV_GS
Gate- source Voltage
Ob ^ID
Drain Current (continuos) at T_C = 25°C
Value
Unit
250
V
250
V
± 20
V
16
A
I_D
Drain Current (continuos) at T_C = 100°C
11
A
I_DM ( ) Drain Current (pulsed)
64
A
P_TOT
Total Dissipation at T_C = 25°C
140
W
Derating Factor
1
W/°C
dv/dt (1) Peak Diode Recovery voltage slope
5
V/ns
T_stg
Storage Temperature
–65 to 175
°C
T_j
Max. Operating Junction Temperature
175
°C
(•)Pulse width limited by safe operating area
February 2003
(1) I_SD≤ 16A, di/dt≤300 A/µs, V_DD≤ V_(BR)DSS, Tj≤T_jMAX
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