STB16NS25T4 Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 250V - 0.23W - 16A D2PAK MESH OVERLAY™ MOSFET

STB16NS25
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
0.9
°C/W
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
°C/W
T_l
Maximum Lead Temperature For Soldering Purpose
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 28 V)
Max Value
Unit
16
A
200
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
250
V
) _IDSS
uct(s ^IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current (V_GS = 0)
Gate-body Leakage
Current (V_DS = 0)
Prod ON (1)
te ^Symbol
le ^VGS(th)
so ^RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
V_DS = Max Rating
V_DS = Max Rating, T_C = 125 °C
V_GS = ± 20 V
1
µA
50
µA
±100
nA
Test Conditions
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 8 A
Min. Typ. Max. Unit
2
3
4
V
0.23 0.28
Ω
) ^{- Ob DYNAMIC}
t(s ^Symbol
c ^gfs ⁽¹⁾
Parameter
Forward Transconductance
du _Ciss
ro _Coss
Obsolete ^{P Crss}
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max,
I_D = 8 A
V_DS = 25V, f = 1 MHz, V_GS = 0
Min.
14
Typ.
15
1270
190
75
Max.
Unit
S
pF
pF
pF
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