STB140NF55 Datasheet, PDF (3/11 Pages) STMicroelectronics – N-CHANNEL 55V - 0.0065 ohm - 80A TO-220/D2PAK STripFET II POWER MOSFET

STB140NF55 STP140NF55
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 27.5 V
I_D = 40 A
30
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 10 V
150
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
V_DD= 44V I_D= 80A V_GS= 10V
142
nC
Q_gs
Gate-Source Charge
27
nC
Q_gd
Gate-Drain Charge
55
nC
Table 9: SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
Min. Typ. Max. Unit
V_DD = 27.5 V
I_D = 40 A
125
ns
R_G = 4.7 Ω
V_GS = 10 V
45
ns
(Resistive Load, Figure 3)
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 80 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 80 A
di/dt = 100A/µs
V_DD = 20 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
90
275
6.5
Max.
80
320
1.5
Unit
A
A
V
ns
µC
A
Figure 3: Safe Operating Area
Figure 4: Thermal Impedance
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