STB140NF55 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 55V - 0.0065 ohm - 80A TO-220/D2PAK STripFET II POWER MOSFET

STB140NF55
STP140NF55
N-CHANNEL 55V - 0.0065 Ω - 80A TO-220/D²PAK
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
V_DSS
R_DS(on)
STB140NF55
STP140NF55
55 V
55 V
< 0.008 Ω
< 0.008 Ω
■ TYPICAL R_DS(on) = 0.0065 Ω
I_D
80 A
80 A
Figure 1:Package
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
3
1
D²PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
APPLICATIONS
■ MOTOR CONTROL
■ HIGH CURRENT, SWITCHING
APPLICATIONS
■ AUTOMOTIVE ENVIRONMENT
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Part Number
STB140NF55T4
STP140NF55
MARKING
B140NF55
P140NF55
Table 3:ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
I_DM(•)
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt⁽¹⁾ Peak Diode Recovery voltage slope
E_AS(2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
December 2004
PACKAGE
D²PAK
TO-220
PACKAGING
TAPE & REEL
TUBE
Value
55
± 20
80
80
320
300
2
10
1.3
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) I_SD ≤80A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 40A, V_DD = 30V
Rev. 2
1/11