STB140NF55 Datasheet, PDF (2/11 Pages) STMicroelectronics – N-CHANNEL 55V - 0.0065 ohm - 80A TO-220/D2PAK STripFET II POWER MOSFET

STB140NF55 STP140NF55
Table 4: THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.5
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
T_l
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_case = 25 °C unless otherwise specified)
Table 5: OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
55
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
±100
nA
Table 6: ON ^(*)
Symbol
Parameter
V_GS(th) Gate Threshold Voltage
R_DS(on)
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
I_D = 40 A
Min.
2
Typ.
3
0.0065
Max.
4
0.008
Unit
V
Ω
Table 7: DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
g_fs ^(*)
Forward Transconductance VDS = 25 V
I_D = 40 A
100
S
C_iss
Input Capacitance
V_DS = 25V f = 1 MHz V_GS = 0
5300
pF
C_oss
Output Capacitance
1000
pF
C_rss
Reverse Transfer
290
pF
Capacitance
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