STB120NH03L Datasheet, PDF (3/11 Pages) STMicroelectronics – N-CHANNEL 30V - 0.005 W - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION

STB120NH03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON ^(*)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
t_r
Turn-on Time
Rise Time
V_DD = 15 V
I_D = 30 A
16
ns
R_G = 4.7 Ω
V_GS = 10 V
95
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD=15V I_D=60A V_GS=10V
57
77
nC
11.8
nC
7.3
nC
Q_oss⁽¹⁾ Output Charge
V_DS= 16 V
V_GS= 0 V
27
nC
Q_gls⁽²⁾ Third-quadrant Gate Charge VDS< 0 V
V_GS= 10 V
55
nC
SWITCHING OFF^(*)
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V
R_G = 4.7Ω,
I_D = 30 A
V_GS = 10 V
Min.
Typ.
48
23
Max.
Unit
ns
ns
SOURCE DRAIN DIODE^(*)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I_SD
I_SDM
Source-drain Current
Source-drain Current (pulsed)
60
A
240
A
V_SD ^(*) Forward On Voltage
I_SD = 30 A V_GS = 0
1.4
V
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(•)_{Pulse width limited by Tjmax}
I_SD = 60 A di/dt = 100A/µs
V_DD = 30 V T_j = 150°C
(see test circuit, Figure 5)
46
62
ns
64
86
nC
2.8
A
(1) _{Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A}
(2) _{Gate charge for synchronous operation}
Safe Operating Area
Thermal Impedance
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