STB120NH03L Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 30V - 0.005 W - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION

STB120NH03L
N-CHANNEL 30V - 0.005 Ω - 60A D²PAK
STripFET™ III POWER MOSFET FOR DC-DC CONVERSION
TYPE
V_DSS
R_DS(on)
I_D
STB120NH03L
30 V <0.0055 Ω 60 A(#)
s TYPICAL R_DS(on) = 0.005 Ω @ 10 V
s R_DS(ON) * Qg INDUSTRY’s BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STB120NH03L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. It is ideal
in high performance DC-DC converter applications where
efficiency is to be achieved at very high output currents.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC-DC
CONVERTERS
3
1
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB120NH03LT4
MARKING
B120NH03L
s_{ABSOLUTE MAXIMUM RATINGS}
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D(#)
I_D(#)
I_DM(•)
P_tot
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
E_AS⁽¹⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(#) Value limited by wire bonding
October 2003
PACKAGE
TO-252
PACKAGING
TAPE & REEL
Value
30
30
± 20
60
60
240
115
0.77
700
-55 to 175
(1) Starting T_j = 25 ^oC, I_D = 30A, V_DD = 15V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/11