STB120NH03L Datasheet, PDF (2/11 Pages) STMicroelectronics – N-CHANNEL 30V - 0.005 W - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION

STB120NH03L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.30
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
T_l
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_case = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250 µA V_GS = 0
30
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20V
±100
nA
ON ^(*)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
V_GS = 5 V
I_D = 30 A
I_D = 30 A
Min.
1
Typ.
1.8
0.005
0.006
Max.
2.5
0.0055
0.0105
Unit
V
Ω
Ω
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
g_fs ^(*)
Forward Transconductance VDS = 10 V
I_D = 30 A
40
S
C_iss
Input Capacitance
V_DS = 15V f = 1 MHz V_GS = 0
4100
pF
C_oss
Output Capacitance
680
pF
C_rss
Reverse Transfer
70
pF
Capacitance
R_G
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
1.3
Ω
Test Signal Level = 20 mV
Open Drain
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