STB100NF03L-03 Datasheet, PDF (3/11 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0026 W -100A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
t_r
Turn-on Time
Rise Time
V_DD = 15 V
I_D = 50 A
35
ns
R_G = 4.7 Ω
V_GS = 4.5 V
315
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
V_DD= 24V I_D= 100A V_GS= 5V
88
nC
Q_gs
Gate-Source Charge
22.5
nC
Q_gd
Gate-Drain Charge
36
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
t_r(Voff)
t_f
t_c
Off-Voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 20 V
I_D = 50 A
R_G = 4.7Ω,
V_GS = 4.5 V
(Resistive Load, Figure 3)
V_clamp = 24 V
I_D = 100 A
R_G = 4.7Ω
V_GS = 4.5 V
(Inductive Load, Figure 5)
Min.
Typ.
115
95
110
55
100
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 100 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 100 A di/dt = 100A/µs
V_DD = 20 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
75
150
4
Max.
100
400
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
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