STB100NF03L-03 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0026 W -100A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET

STB100NF03L-03 STP100NF03L-03
STB100NF03L-03-1
N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
V_DSS R_DS(on)
I_D
STB100NF03L-03
STP100NF03L-03
STB100NF03L-03-01
30 V
30 V
30 V
<0.0032 Ω
<0.0032 Ω
<0.0032 Ω
100 A
100 A
100 A
s TYPICAL R_DS(on) = 0.0026 Ω
s LOW THRESHOLD DRIVE
s 100% AVALANCHE TESTED
s LOGIC LEVEL DEVICE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
3
1
D²PAK
TO-263
(Suffix “T4”)
123
I²PAK
TO-262
(Suffix “-1”)
3
2
1
TO-220
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(1)
Drain Current (continuous) at T_C = 25°C
I_D(1)
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
E_AS(2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area
(1) Current Limited by Package
February 2003
.
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
± 16
100
100
400
300
2
1.9
-55 to 175
(2) Starting T_j = 25 ^oC, I_AR = 50A, V_DD = 50V
Unit
V
V
V
A
A
A
W
W/°C
J
°C
1/11