STB100NF03L-03 Datasheet, PDF (2/11 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0026 W -100A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.5
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
T_l
Maximum Lead Temperature For Soldering Purpose
300
ELECTRICAL CHARACTERISTICS (T_case = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
30
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 16V
°C/W
°C/W
°C
Max.
Unit
V
1
µA
10
µA
±100
nA
ON ^(*)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
V_GS = 4.5 V
I_D = 50 A
I_D = 50 A
Min.
1
Typ. Max.
1.7
2.5
0.0026 0.0032
0.0032 0.0045
Unit
V
Ω
Ω
DYNAMIC
Symbol
g_fs ^(*)
C_iss
C_oss
C_rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS>I_D(on)xR_DS(on)max I_D=10 A
V_DS = 25V f = 1 MHz V_GS = 0
Min.
10
Typ.
6200
1720
300
Max.
Unit
S
pF
pF
pF
2/11