SD56120M Datasheet, PDF (3/8 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST FAMILY

TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
SD56120M
Gate-Source Voltage vs. Case Temperature
1000
100
Ciss
Coss
10
Crss
f =1 MHz
1
0
5
10
15
20
25
30
Vds, DRAIN-SOURCE VOLTAGE (V)
1.03
1.02
1.01
1
0.99
0.98
0.97
VDS = 10 V
0.96
-20
0
ID = 5 A
ID = 4 A
ID = 3 A
ID = 2 A
ID = 1 A
20
40
60
80
Tc, CASE TEMPERATURE (°C)
Drain Current vs. Gate Voltage
9
8
Vds= 10V
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
Vgs, GATE-SOURCE VOLTAGE (V)
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