English
Language : 

SD56120M Datasheet, PDF (2/8 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST FAMILY
◁
SD56120M
ELECTRICAL SPECIFICATION (TCASE = 25°C)
STATIC (Per Section)
Symbol
V(BR)DSS VGS = 0 V
IDSS
VGS = 0 V
IGSS
VGS = 20 V
VGS(Q)
VDS = 28 V
VDS(ON) VGS = 10 V
GFS
VDS = 10 V
CISS*
VGS = 0 V
COSS
VGS = 0 V
CRSS
VGS = 0 V
* Includes Internal Input Moscap.
Test Conditions
IDS = 10 mA
VDS = 28 V
VDS = 0 V
ID = 100 mA
ID = 3 A
ID = 3 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
DYNAMIC
Symbol
POUT
GPS
ηD
Load
mismatch
Test Conditions
VDD = 32 V IDQ = 400 mA
VDD = 32 V IDQ = 400 mA POUT = 120 W
VDD = 32 V IDQ = 400 mA POUT = 120 W
VDD = 32 V IDQ = 400 mA POUT = 120 W
ALL PHASE ANGLES
f = 860 MHz
f = 860 MHz
f = 860 MHz
f = 860 MHz
Min. Typ. Max. Unit
65
V
1
µA
1
µA
2.0
5.0
V
0.7
0.8
V
3
mho
221
pF
48.9
pF
2.25
pF
Min.
120
13
50
10:1
Typ.
16
Max. Unit
W
dB
%
VSWR
IMPEDANCE DATA
Typical Input
Impedance
G
Zin
D
ZDL
Typical Drain
Load Impedance
S
FREQ.
ZIN (Ω)
ZDL(Ω)
860 MHz
5.57 + j 3.488
4.21 - j 2.88
Measured drain to drain and gate to gate respectively.
2/8
 ▷